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TO-92 · 2N7000
onsemi · TO-92 · N-Channel MOSFET (60V/200mA)
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The 2N7000 is the classic through-hole small-signal N-channel enhancement-mode MOSFET, and the onsemi version in the TO-92 (case 29) package remains the default choice when a breadboard-friendly, hand-solderable switch is needed. It is rated 60V drain-source, 200mA continuous and 500mA pulsed drain current, with a static on-resistance of 5.0Ω maximum at VGS = 10V and ID = 500mA, and 6.0Ω maximum at VGS = 4.5V.
Gate threshold is 0.8V to 3.0V, so 5V logic turns it on hard while 3.3V gives usable but higher on-resistance operation. Input capacitance is only 60pF and turn-on/turn-off times are about 10ns each, which makes the part comfortable at several hundred kilohertz for level shifting and small PWM loads. Total power dissipation is 350mW at TC = 25°C (derate 2.8mW/°C), the junction runs from -55°C to +150°C, and the gate is protected to ±20V continuous.
The 2N7000 is fully second-sourced: onsemi, Vishay, Diodes Inc, Nexperia and many Asian vendors produce TO-92 and SOT-23 (2N7002) equivalents, so pricing is stable and supply risk is low. That same popularity makes it a target for remarked low-spec dies; verify RDS(on) at VGS = 10V and the 60V breakdown on incoming inspection. Pinout is source-gate-drain (pins 1-2-3). Shenzhen stock is abundant, MOQ 1,000 pcs bulk or 2,000 pcs on tape.
For production boards prefer the SOT-23 2N7002 to save space and cost; keep the TO-92 2N7000 only for through-hole, socketed or field-serviceable designs, and always specify the vendor part number on the BOM.
Same silicon family, different package. 2N7000 is the TO-92 through-hole version (60V, 200mA, 5Ω); 2N7002 is the SOT-23 surface-mount version (60V, about 300mA, about 2.4Ω at 4.5V). Electrically similar; pick 2N7000 for hand assembly and 2N7002 for production SMT boards.
Marginally. Threshold is 0.8-3.0V, so at 3.3V some samples are barely enhanced and on-resistance can be several times the 10V figure. For reliable 3.3V switching use a logic-level part such as 2N7002 at 4.5V, BSS138, or AO3400. At 5V the 2N7000 is fine.
At 5Ω on-resistance, 100mA of coil current dissipates 50mW which is fine, but 200mA dissipates 200mW against a 350mW limit, and inrush current when the coil energizes can be several times the steady value. Add a flyback diode, check the coil current, or move to a lower-RDS(on) MOSFET for coils above 100mA.
Yes, strongly recommended. The gate is capacitive and floats when the driving pin is high-impedance during reset or sleep, which can turn the load on unintentionally. A 10-100kΩ gate-to-source pulldown plus a 100Ω series resistor gives clean, predictable switching.
Genuine onsemi parts carry a laser or ink mark with 2N7000 plus a date code, matte-tin leads and consistent TO-92 weight. Clones often show higher RDS(on) (above 8Ω at 10V) or lower breakdown. Measure RDS(on) at VGS = 10V, ID = 500mA and check V(BR)DSS above 60V on a sample of each lot.
MOQ is 1,000 pcs bulk or 2,000 pcs on tape-and-reel for onsemi 2N7000G; 100 pcs loose for prototypes. Shenzhen stock ships same day to 2 days; authorized onsemi replenishment is 8-12 weeks.
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