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TO-220 · IRF540N
ActiveMOSFET (N-Channel Power)
IRF540N
Infineon Technologies · TO-220 · MOSFET (N-Channel Power)
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Overview
The IRF540N is a 100 V N-channel power MOSFET in the classic TO-220 through-hole package, rated for 33 A continuous drain current at 25 °C case temperature and 44 mΩ on-resistance at Vgs=10 V. Originally developed by International Rectifier (acquired by Infineon in 2015), it became the go-to switch for high-current, medium-voltage applications from the mid-1990s onward — motor drives, switch-mode power supplies, DC-DC converters, automotive loads, and audio class-D amplifiers.
The device uses HEXFET trench technology (Infineon's proprietary vertical MOSFET architecture) which delivers low on-resistance in a rugged silicon structure with a repetitive avalanche energy rating of 100 mJ. Gate charge is 71 nC total, which means it needs a moderately strong gate driver to switch at frequencies above 50 kHz efficiently — a bare MCU GPIO (20 mA max) will overheat the chip. Use a dedicated driver like IR2110 or TC4420.
Gate threshold is 2-4 V, which means it is NOT a logic-level MOSFET. Driving it from a 3.3 V MCU leaves only 0.3-1.3 V of overdrive, resulting in 3-10× higher Rds(on) than datasheet values and thermal failure under load. For 3.3 V systems use IRL540N (logic-level version of the same 100 V / 33 A die, threshold 1-2 V) or IRLZ44N.
Thermal management: TO-220 package with 1 °C/W junction-to-case (with proper heatsink) or 62 °C/W junction-to-ambient (free air). At 33 A with 44 mΩ you dissipate 48 W — impossible without a large heatsink. Realistically, plan for 10-15 A continuous with modest heatsinking.
Shenzhen stock: Infineon IRF540NPBF (lead-free TO-220) MOQ 50 tubes (2,500 pcs) or 10 pcs loose for prototyping.
Key Features
- 100 V drain-source rating for 24 V and 48 V rails
- 33 A continuous drain current with proper heatsinking
- 44 mΩ Rds(on) at Vgs=10 V
- 100 mJ repetitive avalanche energy rating
Typical Applications
- Motor drivers for DC and BLDC motors (with proper gate drive)
- Switch-mode power supplies and DC-DC converters under 50 kHz
- Automotive load switching (lights, pumps, fans)
- Class-D audio amplifier output stage
- Battery management and solar charge controllers
Specifications
- Channel Type
- N-Channel
- Drain-Source Voltage
- 100 V
- Continuous Drain Current
- 33 A
- Rds(on) Max
- 44 mΩ
- Gate Charge
- 71 nC
- Power Dissipation
- 130 W
- Operating Temperature
- -55 to 175 °C
- Mounting Type
- Through Hole
- RoHS
- Compliant
Procurement Tips
For new designs at 100 V, consider the IRFB4110 (100 V / 180 A / 4.5 mΩ) or IPP60R190P6 (600 V CoolMOS) — modern silicon offers 5-10× lower Rds(on) in the same TO-220 package.
Frequently Asked Questions
Can I drive IRF540N directly from an Arduino (5 V)?
Marginal. At 5 V gate, Rds(on) rises to about 90 mΩ — nearly 2× the datasheet value at 10 V. It works for low currents (under 5 A) but wastes heat. For any serious current, use a proper gate driver IC or spec a logic-level MOSFET like IRL540N.
What's the difference between IRF540N and IRL540N?
Same die family, different gate threshold. IRF540N is standard-level (Vgs(th) = 2-4 V, Rds(on) spec'd at Vgs=10 V). IRL540N is logic-level (Vgs(th) = 1-2 V, Rds(on) spec'd at Vgs=4 V). Use IRL for 3.3 V or 5 V MCU direct drive.
What is the maximum switching frequency?
Practically 50-100 kHz with a proper gate driver. Gate charge of 71 nC means at 100 kHz you need 7.1 mA average gate current, plus transient peaks of several amps during the Miller plateau. Above 100 kHz, switching losses dominate — choose a lower-Qg part like IRF7458 or Si7114DN.
Why does my IRF540N get extremely hot?
Three common causes: (1) insufficient gate drive voltage (see logic-level question), (2) no heatsink and current above 5 A, (3) switching frequency too high for the gate charge. Diagnose by measuring Vgs with an oscilloscope during operation — it should reach a solid 10 V with fast edges.
Is IRF540N counterfeit-prone?
Yes, TO-220 power MOSFETs are heavily counterfeited. Genuine Infineon/IR parts have laser-etched logo, matte tin-plated leads with visible copper under scratch, and correct weight (2.3 g). Fakes often have silk-printed marking, shiny leads, lighter weight, and fail at rated current. We X-ray and curve-trace every lot.
MOQ and lead time?
MOQ 1 tube (50 pcs) for prototyping, 2,500 pcs for volume. Infineon authorized 12-20 weeks; Shenzhen stock 1-3 days.
Alternatives & Equivalents
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