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TO-220 · IRF3205
ActiveN-Channel Power MOSFET (55V/110A)
IRF3205
Infineon Technologies · TO-220 · N-Channel Power MOSFET (55V/110A)
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Get a competitive quote within 24 hours. Volume discounts available. Shenzhen stock ships in 1-2 business days.
Overview
The IRF3205 is the reference 55V N-channel HEXFET power MOSFET that International Rectifier (now Infineon Technologies) built for high-current switching, and it remains one of the most-specified TO-220 parts in the industry. Its headline numbers are a continuous drain current of 110A at TC = 25°C (80A at TC = 100°C, with the package leads limiting practical current to 75A) and a static drain-to-source on-resistance of 8.0mΩ maximum measured at VGS = 10V and ID = 62A. That combination keeps conduction loss low enough for battery inverters, e-bike and scooter controllers, and high-current buck stages without paralleling devices.
Electrically the gate threshold is 2.0V to 4.0V, so the IRF3205 is not a logic-level part: it needs a 10V gate drive, or a dedicated gate driver such as the IR2110, to reach its rated RDS(on). Total gate charge is 146nC with 3247pF input capacitance, which sets the drive-current and switching-loss budget at tens of kilohertz. The device is fully avalanche rated, carries a 175°C maximum junction temperature, and offers a junction-to-case thermal resistance of 0.75°C/W, so a modest heatsink removes tens of watts continuously.
Sourcing note: the IRF3205 is heavily counterfeited on broker markets because of its popularity in inverters and UPS units. Clones frequently use a smaller die with two to three times the real RDS(on), or a 30V part remarked as 55V. Verify by curve-tracing VDS at a known ID, measuring RDS(on) at VGS = 10V with a four-wire Kelvin connection, and checking the laser mark and date code. We ship genuine Infineon IRF3205PbF from authorized channel with certificate of conformance on request.
Key Features
- 55V / 110A N-channel HEXFET in TO-220AB
- Ultra-low RDS(on): 8.0mΩ max at VGS = 10V
- 200W dissipation at TC = 25°C, RθJC only 0.75°C/W
- Fully avalanche rated, 175°C junction
- 146nC gate charge suits 20-100kHz switching
Typical Applications
- DC-AC inverters and UPS output stages
- E-bike, scooter and golf-cart motor controllers
- High-current synchronous buck and boost converters
- Battery protection and load-switch modules
- Solar charge controllers and MPPT stages
- Automotive accessory switching (12V/24V rails)
Specifications
- Channel Type
- N-Channel
- Drain-Source Voltage (VDS)
- 55 V
- Continuous Drain Current (ID, TC = 25 °C)
- 110 A
- RDS(on) max (VGS = 10 V, ID = 62 A)
- 8.0 mΩ
- Gate Threshold Voltage VGS(th)
- 2.0 to 4.0 V
- Total Gate Charge (Qg)
- 146 nC
- Power Dissipation (PD, TC = 25 °C)
- 200 W
- Operating Junction Temperature
- -55 to 175 °C
- Pins
- 3
- RoHS
- Compliant
Procurement Tips
Specify the PbF (lead-free) orderable IRF3205PbF and buy from authorized Infineon channel; broker-market IRF3205 is one of the most remarked power MOSFETs in Asia. Ask us for curve-trace data on a sample lot before releasing volume orders.
Frequently Asked Questions
Is the IRF3205 a logic-level MOSFET?
No. Gate threshold is 2.0-4.0V and the 8.0mΩ RDS(on) is only guaranteed at VGS = 10V. Driving it from a 3.3V or 5V MCU pin leaves it in the linear region and it will overheat. Use a gate driver (IR2110, TC4420) or choose a logic-level part such as IRLZ44N for 5V drive.
IRF3205 vs IRFZ44N - which should I use?
IRF3205 is 55V with 8.0mΩ and 110A; IRFZ44N is 55V with about 17.5mΩ and 49A. For high continuous current and lowest conduction loss pick IRF3205. For lower gate charge and faster switching at moderate current, IRFZ44N (63nC) is easier to drive. Both are TO-220 and pin-compatible.
How much continuous current can I really run through a TO-220 IRF3205?
The 110A figure is a die/thermal rating at TC = 25°C, but the package leads limit current to 75A. In practice your limit is set by heatsinking: at 8mΩ and 40A you dissipate about 13W, which needs a proper heatsink to keep the junction under 150°C. Design for the thermal path, not the datasheet headline.
What gate resistor and drive voltage do you recommend?
Use 10V gate drive for rated RDS(on), with a 4.7-10Ω series gate resistor to damp ringing and limit peak driver current (146nC gate charge means several amps of peak current at fast edges). Add a 10kΩ gate-to-source pulldown so the device stays off while the driver is unpowered.
How do I detect a counterfeit IRF3205?
Curve-trace the part: a genuine device shows under 8mΩ at VGS = 10V, ID = 62A. Fakes commonly read 20-40mΩ or break down below 55V. Also check the laser-etched Infineon/IR logo (not printed ink), uniform matte-tin leads, correct package weight, and a date code consistent with the lot. We electrically sample-test every reel.
What is the MOQ and lead time?
MOQ is 1 tube (50 pcs) for IRF3205PbF in stock, or 500 pcs for volume pricing. Shenzhen stock ships in 1-2 business days; Infineon authorized-channel replenishment runs 8-14 weeks during allocation.
Can I parallel several IRF3205 for more current?
Yes, MOSFETs share current reasonably well because RDS(on) has a positive temperature coefficient. Add a small individual gate resistor (about 4.7Ω) per device, keep gate loops symmetric, and derate the total current to about 80% of the sum of individual ratings.
Alternatives & Equivalents
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