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DIP-14 / SOP-14 · IR2110
ActiveHigh & Low-Side Gate Driver
IR2110
Infineon Technologies · DIP-14 / SOP-14 · High & Low-Side Gate Driver
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Overview
The IR2110 is a high-voltage, high-speed power MOSFET and IGBT gate driver from Infineon Technologies, originally developed by International Rectifier, with independent high-side and low-side referenced output channels in one package. Proprietary HVIC construction combined with latch-immune CMOS gives a floating channel designed for bootstrap operation that is fully operational to +500 V on the IR2110 and +600 V on the IR2113, tolerant to negative transient VS voltage and dV/dt immune. Each output sources and sinks 2 A peak from a 10 V to 20 V gate drive supply, with typical propagation delays of 120 ns on and 94 ns off and channel-to-channel delay matching of 10 ns maximum on the IR2110 (20 ns on the IR2113). Outputs are in phase with inputs and both channels have undervoltage lockout.
The separate logic supply is what makes the IR2110 so easy to use in mixed-voltage designs. VDD can run from 3.3 V to 20 V independently of the 10 V to 20 V gate drive rail, logic and power grounds may sit up to ±5 V apart, and the CMOS Schmitt-triggered inputs have internal pulldowns and are compatible with standard CMOS or LSTTL outputs down to 3.3 V logic. That means a 3.3 V microcontroller can drive HIN and LIN directly while the MOSFET gates still get a full 12 V or 15 V turn-on. A cycle-by-cycle edge-triggered shutdown input (SD) provides fast fault response without needing to remove the gate drive supply.
Design practice matters more than the datasheet numbers here. The high side is powered by a bootstrap network: a fast-recovery or ultrafast diode from VCC to VB that blocks the full motor rail, plus a capacitor from VB to VS sized for the gate charge, switching frequency and the number of consecutive high-side on-times. Under 1 µF suits small MOSFETs at moderate frequency; IGBT modules often need 10 µF with a 100 nF ceramic in parallel. The IR2110 provides no dead time of its own — you must generate it in firmware or with a dedicated dead-time controller, or the half bridge will shoot through. Keep the VS-to-COM loop and the gate drive loops tight, use a small series gate resistor to damp ringing, and place the bootstrap capacitor close to the pins.
Sourcing note: the through-hole IR2110PBF is a 14-lead PDIP and the surface-mount IR2110S (IR2110SPBF, IR2110STRPBF) is a wide-body SOIC. Related devices worth cross-referencing are the IR2113 (600 V offset), the IRS2110 in the newer HVIC family, and the IR2104 and IR2184 which integrate a single half-bridge driver with fixed dead time in eight pins for lower-power designs. Because the IR2110 is standard in inverters, welders, induction heaters and motor drives, it is heavily counterfeited: clones often have a much lower bootstrap voltage rating that only fails once the bus exceeds 200 V, or weak output buffers that cannot source 2 A. Verify by curve-testing the high-side channel at elevated VS, measuring peak gate current into a known capacitive load, and checking the laser mark and date code. MOQ is one tube (25 pcs PDIP or 50 pcs SOIC) or 500 pcs on reel; Shenzhen stock ships in one to two days while Infineon authorized-channel lead time is twelve to twenty weeks.
Key Features
- High-side floating channel fully operational to +500 V on a bootstrap supply
- 2 A peak source and 2 A peak sink per output from a 10 V to 20 V gate rail
- Separate 3.3 V to 20 V logic supply with ±5 V logic-to-power ground offset
- Matched propagation delay: 120 ns on, 94 ns off typical, 10 ns max matching
- Undervoltage lockout on both channels plus cycle-by-cycle shutdown input
Typical Applications
- Half-bridge and full-bridge motor drives up to 500 V bus
- DC-AC inverters, UPS systems and solar string inverters
- Synchronous buck converters and telecom DC-DC stages
- Induction heating, electronic ballasts and class-D amplifiers
- Welding machines, plasma cutters and high-power SMPS
- IGBT and SiC module gate drive in industrial drives
Specifications
- Driver Type
- High-Side + Low-Side Half-Bridge Gate Driver
- Floating Bootstrap Voltage (Max)
- 500 V
- Gate Drive Supply Voltage (VCC / VBOOT)
- 10 to 20 V
- Logic Supply Voltage (VDD)
- 3.3 to 20 V
- Peak Output Current (Source / Sink)
- 2 / 2 A
- Propagation Delay (ton / toff, Typ)
- 120 / 94 ns
- Channel Delay Matching (Max)
- 10 ns
- Input Logic
- CMOS Schmitt-Trigger, 3.3 V Compatible
- Pins
- 14
- RoHS
- Compliant
Procurement Tips
Quote both the IR2110PBF (PDIP-14, easy for prototyping) and the IR2110SPBF (wide-body SOIC, for production) up front so you are not forced into a package change after layout. Buy the bootstrap diode as a matched line item — an ultrafast 600 V type — because a slow recovery diode is the most common cause of high-side driver failure in the field.
Frequently Asked Questions
IR2110 versus TC4420 — when do I use each?
They solve different problems. The TC4420 is a single-output low-side driver with 6 A peak and 4.5 V to 18 V supply: perfect for switching one MOSFET referenced to ground, where you need far more gate current than a microcontroller pin can supply. The IR2110 delivers only 2 A peak per channel but adds a floating high-side channel rated to 500 V, so it can drive the upper MOSFET of a half bridge whose source sits at the switching node. Use the TC4420 for low-side and isolated secondary-side drive, the IR2110 for half-bridge and full-bridge topologies. For gate charges above roughly 100 nC at high frequency, consider the 4 A IR2113-class or a dedicated isolated gate driver.
How do I size the bootstrap capacitor and diode?
Size the capacitor for the charge the high-side gate needs each cycle plus the quiescent draw of the floating section: CBOOT ≥ (Qg + Iqbs / fsw + Iqbs·tmax) / ΔV, where ΔV is the allowed droop, typically 1 V to 2 V. A small 30 nC MOSFET at 50 kHz works with 1 µF; a 250 nC IGBT needs 10 µF or more. Always parallel a 100 nF ceramic for high-frequency decoupling. The diode must block the full motor rail plus margin and be fast or ultrafast recovery — a 1N4007 is far too slow and will allow reverse recovery current into VB. Choose 600 V rated parts on a 400 V bus.
Does the IR2110 generate dead time for me?
No. HIN and LIN are independent, outputs are in phase with inputs, and if you drive both high simultaneously the half bridge will shoot through. Insert dead time in firmware, with a hardware dead-time generator, or by using an integrated half-bridge driver such as the IR2104 or IR2184, which have fixed dead time and complementary outputs. A typical minimum dead time is 300 ns to 1 µs depending on MOSFET turn-off delay and gate resistance.
Can I drive the inputs from a 3.3 V microcontroller?
Yes. VDD (the logic supply) is specified from 3.3 V to 20 V and the inputs are CMOS Schmitt-triggered and compatible with standard CMOS or LSTTL down to 3.3 V logic. Keep VDD separate from the 10 V to 20 V gate drive supply VCC, tie VSS to the MCU ground, and remember the datasheet note that when VDD is below 5 V the minimum VSS offset is limited to minus VDD. Do not run VDD below 3.3 V.
What happens if the bootstrap supply collapses?
Undervoltage lockout on both channels shuts the outputs off and holds them low until VB recovers, which prevents the MOSFETs from being left partially enhanced and dissipating heavily in the linear region. This is why the high side cannot stay on indefinitely at 100 percent duty: the bootstrap capacitor discharges through the floating supply current. If you need continuous high-side conduction, use a charge pump, an isolated supply, or a driver with an integrated bootstrap refresh such as the IR2101-class parts, or keep the duty cycle below about 95 percent.
IR2110 versus IR2113 — what is the difference?
Same 2 A / 2 A output stage and same 10 V to 20 V gate drive range, but the IR2113 raises the floating offset rating to 600 V maximum versus 500 V on the IR2110, and its channel delay matching is specified at 20 ns maximum instead of 10 ns. For a 400 V bus the IR2110 is adequate; for 480 V or 600 V systems and for anything with heavy dV/dt transients, use the IR2113 or the newer 650 V 2ED2110 family. They are pin-compatible in the same packages.
How do I detect a counterfeit IR2110?
The dangerous clones work on the bench and fail in the field. Test the high-side channel at an elevated VS offset — remark a lower-voltage driver and it breaks down or latches above 200 V. Measure peak output current into a known capacitive load; genuine parts deliver 2 A peak with 120 ns and 94 ns propagation delays, while clones show sluggish edges and 500 mA drive. Check the laser-etched Infineon or IR logo, the date code against the lot, and the package: IR2110PBF is a 14-lead PDIP, IR2110S a wide-body SOIC. We X-ray and electrically test samples from every reel.
What is the MOQ and lead time?
MOQ is one tube of IR2110PBF (25 pcs, PDIP-14) or IR2110SPBF, or one reel of IR2110STRPBF for volume. Prototype quantities of 50 pcs loose are available. Shenzhen stock ships in one to two business days; Infineon authorized-channel lead time is twelve to twenty weeks and gate drivers are commonly allocated during shortage cycles, so keep a qualified alternate on your AVL.
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