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SOT-23 · SI2302
Vishay · SOT-23 · MOSFET (N-Channel)
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Get a competitive quote within 24 hours. Volume discounts available. Shenzhen stock ships in 1-2 business days.
The SI2302 is Vishay's 20 V N-channel trench MOSFET in the compact SOT-23 package, rated for 2.8 A continuous drain current and 65 mΩ on-resistance at Vgs=4.5 V. It is one of the most popular logic-level load switches and level-shifters in modern portable electronics — phones, wearables, drones, IoT sensors, battery packs — anywhere you need to switch a few amps from a 3.3 V or 1.8 V MCU GPIO with minimal heat.
The gate threshold is 0.6-1.2 V, which means it fully turns on at Vgs=2.5 V, well below the 3.3 V rail of most modern MCUs. This makes it a direct replacement for the 2N7002 (which needs 5 V to reach its 2.4 Ω spec) in low-voltage designs. At Vgs=4.5 V the Rds(on) drops to 65 mΩ typ / 90 mΩ max, dissipating only 65 mW at 1 A — cool enough to skip a heatsink.
Package is standard SOT-23 with pinout G-D-S (pin 1 = Gate, pin 2 = Source, pin 3 = Drain). Absolute maximum drain-source voltage is 20 V, so it is safe for single-cell Li-ion (4.2 V max), 3.3 V, 5 V and 12 V rails with margin, but not for 24 V systems.
Total gate charge is only 5 nC, so switching speeds into the tens of MHz are achievable with a proper gate driver. Body diode is fast enough for most synchronous buck applications under 500 kHz.
Related parts in the family: SI2300 (20 V, 2.8 A, P-channel — complementary), SI2301 (20 V, 2.3 A, P-channel), SI2304 (20 V, 4 A, N-channel), AO3400 (Alpha & Omega, 30 V, 5.7 A, same package).
Our Shenzhen stock: Vishay SI2302DS-T1-GE3 (SOT-23 tape-and-reel) MOQ 3,000 pcs, or 100 pcs loose.
For battery-powered designs where 20 V is more than enough, standardize on SI2302 or AO3400 — they cover 90% of load-switch needs and simplify BOM consolidation.
For 3.3 V systems and currents above 200 mA, SI2302 wins: it has 10× lower Rds(on) at Vgs=3.3 V and can handle 2.8 A vs 300 mA. For 5 V systems and small-signal switching under 100 mA, 2N7002 is cheaper and adequate. SI2302 is limited to 20 V; 2N7002 handles 60 V.
Yes, that's exactly what it's designed for. Vgs(th) is 0.6-1.2 V, and at Vgs=3.3 V you get about 80 mΩ Rds(on) — well within spec. Add a 100 Ω series gate resistor to damp ringing and a 10 kΩ gate-to-source pull-down for safe default-off during MCU reset.
Practically 500 kHz to 1 MHz with a proper gate driver. Gate charge is only 5 nC, so switching losses are low. At 100 kHz with 2 A load and 5 V supply, switching loss is about 100 mW — manageable.
Basic gate-source zener clamping (±20 V), but the gate oxide is still vulnerable to CDM (charged device model) ESD during assembly. Handle with grounded equipment. For exposed connectors, add an external TVS diode.
Moderately. Genuine Vishay parts have laser-etched "SI2302" plus date code, matte tin leads, and consistent weight. Fakes may be remarked SI2300 (P-channel) or lower-voltage clones. Verify with a curve tracer or measure Rds(on) at Vgs=4.5 V — genuine parts read under 90 mΩ; clones often exceed 200 mΩ.
MOQ 3,000 pcs on reel for SI2302DS-T1-GE3, or 100 pcs loose. Vishay authorized 8-16 weeks; Shenzhen stock 1-2 days.
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